SIB452DK-T1-GE3
निर्माता:
विशाय सिलिकॉनिक्स
विवरण:
MOSFET N-CH 190V 1.5A PPAK SC75
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs:
6.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 500mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
190 V
Vgs (Max):
±16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
135 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SC-75-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Power Dissipation (Max):
2.4W (Ta), 13W (Tc)
Technology:
MOSFET (Metal Oxide)
मूल उत्पाद संख्या:
एसआईबी452
परिचय
एन-चैनल 190 V 1.5A (Tc) 2.4W (Ta), 13W (Tc) सतह माउंट PowerPAK® SC-75-6
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| छवि | भाग # | विवरण | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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