2N7002E-T1-E3
निर्माता:
विशाय सिलिकॉनिक्स
विवरण:
MOSFET N-CH 60V 240MA SOT23-3
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
श्रेणी:
असतत अर्धचालक उत्पाद ट्रांजिस्टर FETs, MOSFETs एकल FETs, MOSFETs
FET Feature:
-
वीजीएस (वें) (अधिकतम) @ आईडी:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 250mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
21 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
240mA (Ta)
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7002
परिचय
एन-चैनल 60 V 240mA (Ta) 350mW (Ta) सतह माउंट SOT-23-3 (TO-236)
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| छवि | भाग # | विवरण | |
|---|---|---|---|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
|
|
SI7157DP-T1-GE3 |
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|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
|
|
|
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
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