SIHG47N60AE-GE3
निर्माता:
विशाय सिलिकॉनिक्स
विवरण:
MOSFET N-CH 600V 43A TO247AC
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
182 nC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 24A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 100 V
Mounting Type:
Through Hole
Series:
E
Supplier Device Package:
TO-247AC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
बिजली अपव्यय (अधिकतम):
313W (टीसी)
प्रौद्योगिकी:
MOSFET (धातु ऑक्साइड)
Base Product Number:
SIHG47
परिचय
एन-चैनल 600 V 43A (Tc) 313W (Tc) छेद के माध्यम से TO-247AC
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| छवि | भाग # | विवरण | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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