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आईआरएफ640एसपीबीएफ

निर्माता:
विशाय सिलिकॉनिक्स
विवरण:
MOSFET N-CH 200V 18A D2PAK
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
3.1W (Ta), 130W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF640
परिचय
एन-चैनल 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) सतह माउंट D2PAK (TO-263)
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