IXFP7N100P
निर्माता:
IXYS
विवरण:
MOSFET N-CH 1000V 7A TO220AB
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
एफईटी सुविधा:
-
Vgs(th) (Max) @ Id:
6V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
पैकेज / मामला:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
आरडीएस ऑन (अधिकतम) @ आईडी, वीजीएस:
1.9ओम @ 3.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2590 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP7N100
परिचय
एन-चैनल 1000 V 7A (Tc) 300W (Tc) छेद के माध्यम से TO-220-3
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