IXFX66N85X
निर्माता:
IXYS
विवरण:
MOSFET N-CH 850V 66A PLUS247-3
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8900 pF @ 25 V
Mounting Type:
Through Hole
श्रृंखला:
HiPerFET™, अल्ट्रा एक्स
Supplier Device Package:
PLUS247™-3
एमएफआर:
IXYS
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
बिजली अपव्यय (अधिकतम):
1250W (Tc)
Technology:
MOSFET (Metal Oxide)
मूल उत्पाद संख्या:
IXFX66
परिचय
एन-चैनल 850 V 66A (Tc) 1250W (Tc) छेद के माध्यम से PLUS247TM-3
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