IXTP3N120
निर्माता:
IXYS
विवरण:
MOSFET N-CH 1200V 3A TO220AB
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 25 V
Mounting Type:
Through Hole
श्रृंखला:
हायपरफेट™
Supplier Device Package:
TO-220-3
एमएफआर:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
बिजली अपव्यय (अधिकतम):
200W (टीसी)
Technology:
MOSFET (Metal Oxide)
मूल उत्पाद संख्या:
IXTP3
परिचय
एन-चैनल 1200 V 3A (Tc) 200W (Tc) छेद के माध्यम से TO-220-3
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| छवि | भाग # | विवरण | |
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|
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