SCT3160KLGC11

निर्माता:
रोहम सेमीकंडक्टर
विवरण:
SICFET N-CH 1200V 17A TO247N
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 2.5mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 18 V
Rds On (Max) @ Id, Vgs:
208mOhm @ 5A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
398 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
103W (Tc)
Technology:
SiCFET (Silicon Carbide)
मूल उत्पाद संख्या:
एससीटी3160
परिचय
एन-चैनल 1200 V 17A (Tc) 103W (Tc) छेद के माध्यम से TO-247N
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