SI4483ADY-T1-GE3
निर्माता:
विशाय सिलिकॉनिक्स
विवरण:
MOSFET P-CH 30V 19.2A 8SO
श्रेणी:
असतत सेमीकंडक्टर उत्पाद
विनिर्देश
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.8mOhm @ 10A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
19.2A (Tc)
Power Dissipation (Max):
2.9W (Ta), 5.9W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4483
परिचय
पी-चैनल 30 V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) सतह माउंट 8-SOIC
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|---|---|---|---|
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|
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SI7148DP-T1-E3 |
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SI7157DP-T1-GE3 |
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|
IRFP21N60LPBF |
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SIR880ADP-T1-GE3 |
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SIR873DP-T1-GE3 |
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SIJ478DP-T1-GE3 |
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SUD50N04-8M8P-4GE3 |
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SISA72DN-T1-GE3 |
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